BORYSOV, A. V.; HUSEV, V. A.; MURZYN, D. H. Radiation-heat treatment of high-power bipolar transistors with anti-multiplication layer. Electronics and Communications, [S. l.], v. 17, n. 5, p. 5–9, 2012. DOI: 10.20535/2312-1807.2012.17.5.217938. Disponível em: http://elc.kpi.ua/old/article/view/217938. Acesso em: 19 may. 2024.