KUKURUDZIAK, M. S. Technological Causes of p-n-Junction Break-down of Silicon p-i-n Photodiodes. Microsystems, Electronics and Acoustics, Kyiv, Ukraine, v. 27, n. 3, p. 268299–1, 2022. DOI: 10.20535/2523-4455.mea.268299. Disponível em: https://elc.kpi.ua/article/view/268299. Acesso em: 27 jul. 2024.