Photoluminescence of porous silicon layers obtained by chemical way
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Abstract
In the paper photoluminescence of stain etched porous silicon layers is analyzed depending on wafer type and etching parameters. It is shown that porous silicon has bright, UVinduced luminescence in orange-red (650- 750 nm) spectrum. Type of photoluminescence spectrum testify the presence of big quantity of nanocrystals with different sizes
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References
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Korsunskaya N.E., Stara T.R., Homenkova L.YU., Svezhencova E.V., Mel'nichenko N.N., Sizov F.F., “Priroda izlucheniya poristogo kremniya, poluchennogo himicheskim travlenim [The nature of radiation from porous silicon obtained by chemical etching]“, Fіzika i tekhnika poluprovodnikov, vol. 44, no. 1, pp. 82 – 86, 2010
