Micro-and nanostructures in modern memory devices

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Published: Mar 28, 2011
DOI: https://doi.org/10.20535/2312-1807.2011.16.2.267720
Keywords:
Nanoelectronic memory devices, Dynamic random-access memory, Flash memory.

Main Article Content

G. Mladenov
V. Spivak
E. Koleva
A. Bogdan
S. Zelensky

Abstract

Electronic storage devices are an important part of modern information and communication systems, defining the parameters and possibilities of the whole system. In this paper it is shown the operating principle and parameters of dynamic random-access storage media, working as operative memory in computer systems as well as the flash-memories, wide and successive used as input and output of data and to keep it out of information systems.

Article Details

How to Cite
Mladenov, G. ., Spivak, V. ., Koleva, E. ., Bogdan, A. ., & Zelensky, S. . (2011). Micro-and nanostructures in modern memory devices. Electronics and Communications, 16(2), 5–8. https://doi.org/10.20535/2312-1807.2011.16.2.267720
Issue
Vol. 16 No. 2 (2011)
Section
Nanostructures and nanotechnology in electronics
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References

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