Extending the operating frequency band of helicon valves
Main Article Content
Abstract
The ways to expand the bandwidth of the meter and decameter waves isolators based on helicon resonators are considered. The cascade scheme of two resonance isolators is proposed. Scattering characteristics of the cascade isolator are presented. The bandwidth of the cascade isolator can exceed an octave
Article Details
This work is licensed under a Creative Commons Attribution 4.0 International License.
Authors who publish with this journal agree to the following terms:- Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.
- Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgement of its initial publication in this journal.
- Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).
References
J. W. Orton and C. T. Foxon, “Group III nitride semiconductors for short wavelength light-emitting devices”, Reports on Progress in Physics, vol. 61, no. 1, pp. 1–75, Jan. 1998. DOI:10.1088/0034-4885/61/1/001
F. A. Ponce and D. P. Bour, “Nitride-based semiconductors for blue and green light-emitting devices”, Nature, vol. 386, no. 6623, pp. 351–359, Mar. 1997. DOI:10.1038/386351a0
S. C. Jain, M. Willander, J. Narayan, and R. V. Overstraeten, “III–nitrides: Growth, characterization, and properties”, Journal of Applied Physics, vol. 87, no. 3, pp. 965–1006, Feb. 2000. DOI:10.1063/1.371971
I. Petrov, E. Mojab, R. C. Powell, J. E. Greene, L. Hultman, and J.-E. Sundgren, “Synthesis of metastable epitaxial zinc-blende-structure AlN by solid-state reaction”, Applied Physics Letters, vol. 60, no. 20, pp. 2491–2493, May 1992. DOI:10.1063/1.106943
R. F. Davis, “Thin films and devices of diamond, silicon carbide and gallium nitride”, Physica B: Condensed Matter, vol. 185, no. 1-4, pp. 1–15, Apr. 1993. DOI:10.1016/0921-4526(93)90210-W
I. Vurgaftman and J. R. Meyer, “Band parameters for nitrogen-containing semiconductors”, Journal of Applied Physics, vol. 94, no. 6, pp. 3675–3696, Sep. 2003. DOI:10.1063/1.1600519
W. J. Fan, M. F. Li, T. C. Chong, and J. B. Xia, “Electronic properties of zinc-blende GaN, AlN, and their alloys Ga1− Al N”, Journal of Applied Physics, vol. 79, no. 1, pp. 188–194, Jan. 1996. DOI:10.1063/1.360930
S. K. Pugh, D. J. Dugdale, S. Brand, and R. A. Abram, “Electronic structure calculations on nitride semiconductors”, Semiconductor Science and Technology, vol. 14, no. 1, pp. 23–31, Jan. 1999. DOI:10.1088/0268-1242/14/1/003
M. Suzuki and T. Uenoyama, “Optical gain and crystal symmetry in III–V nitride lasers”, Applied Physics Letters, vol. 69, no. 22, pp. 3378–3380, Nov. 1996. DOI:10.1063/1.117265
A. T. Meney, E. P. O’Reilly, and A. R. Adams, “Optical gain in wide bandgap GaN quantum well lasers”, Semiconductor Science and Technology, vol. 11, no. 6, pp. 897–903, Jun. 1996. DOI:10.1088/0268-1242/11/6/008
K.V. Kulikov and V.A. Moskaluk, “High-frequency parameters of gallium nitride”, Technique and Microwave devices, no. 2, p. 48, 2008.
V.A. Moskaluk, Physics of electronic processes. Part II. Dynamic processes: Textbook. allowance, Kyiv: Avers, 2004, p.186.
C. Bulutay, B. K. Ridley, and N. A. Zakhleniuk, “Electron momentum and energy relaxation rates in GaN and AlN in the high-field transport regime”, Physical Review B, vol. 68, no. 11, Sep. 2003. DOI:10.1103/PhysRevB.68.115205
