Simulation of transient processes in low-frequency channel of the semiconductor regulated compensator
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Abstract
The simulation of transient processes in low-frequency channel of the semiconductor two-channel regulated compensator of inactive components of total power is presented in given article. New control methods for two-channel compensator that allow to provide a high performance of the converter in the changing character of the load are proposed. Conclusions of obtained results are presented.
References 6, figures 3.
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References
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