Simulation of transient processes in low-frequency channel of the semiconductor regulated compensator

Main Article Content

Olena O. Levon

Abstract

The simulation of transient processes in low-frequency channel of the semiconductor two-channel regulated compensator of inactive components of total power is presented in given article. New control methods for two-channel compensator that allow to provide a high performance of the converter in the changing character of the load are proposed. Conclusions of obtained results are presented.

References 6, figures 3.

Article Details

How to Cite
Levon, O. O. (2016). Simulation of transient processes in low-frequency channel of the semiconductor regulated compensator. Electronics and Communications, 21(5), 38–42. https://doi.org/10.20535/2312-1807.2016.21.5.81891
Section
Power electronics

References

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Kaida, E. A. (2011) Nechetkoe regulirovanie ustroistvom compensacii neactivnuh sostavlyaushih polnoi moshnosti. Tehnichna electrodynamika. Kiev. ІEDNANU. P. 1. Tematchnui vup. Pp.184-188.

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