Radiation-heat treatment of high-power bipolar transistors with anti-multiplication layer

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Published: Nov 11, 2012
DOI: https://doi.org/10.20535/2312-1807.2012.17.5.217938

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A. V. Borysov
National technical university of Ukraine "Igor Sikorsky Kyiv polytechnic institute"
V. A. Husev
D. H. Murzyn

Abstract

Tne influence of alpha-particles irradiation on parameters of power bipolar transistors with voltage dividing layer in bulk collector region was investigated. It was shown the switch off time of collector current was decreased in two times in result of such treatments

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How to Cite
Borysov, A. V., Husev, V. A., & Murzyn, D. H. (2012). Radiation-heat treatment of high-power bipolar transistors with anti-multiplication layer. Electronics and Communications, 17(5), 5–9. https://doi.org/10.20535/2312-1807.2012.17.5.217938
Issue
Vol. 17 No. 5 (2012)
Section
Solid-state electronics
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