Comparison of efficiency recombination of nonequilibrium carriers in structures with quantum dots and quantum wells, grown by mocvd
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Abstract
The article presents the results of comparing the efficiency of recombination of nonequilibrium carriers in the InGaN quantum dots (QDs) and quantum wells (QWs), emitting in the green region of the spectrum. Results of studies using optical temperature-dependent photoluminescence (PL) showed that the internal quantum efficiency of the InGaN quantum dots at room temperature was 8.7 times greater than that obtained for the InGaN quantum wells, due to better spatial localization of electrically charged particles. The results of measurements of photoluminescence spectra at different levels of laser excitation showed that the effect of polarization-built electric fields on recombination processes of electrically charged particles in Kant points are negligible compared to the quantum wells. The results show that the InGaN quantum dots improve the luminescence efficiency of the LEDs in green and blue spectral bands.
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