Pyroelectric Response of Strain Limited III-V Semiconductor

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Yurii Myhailovych Poplavko
Y. I. Yakimenko

Abstract

Under the anisotropy of boundary conditions, a high-gap III-V semiconductor indicates a behavior of pyroelectric crystal (in spite of it is a piezoelectric only). Partial limitation of strain in the [111]-plate of this crystal provides its substantial electric response to time-variation of temperature dT(t) or pressure dp(t). Herewith the voltage sensitivity of semi-insulating GaAlAs or GaN sensor is close to one of the PZT ceramics. However, PZT cell-transducer used as sensor device needs a hybrid integration with semiconductor amplifier. Unlike of this, if sensor device is based on the III-V crystal, transducer and amplifier are various parts of one crystal chip.

References 4, figures 5.

Article Details

How to Cite
Poplavko, Y. M., & Yakimenko, Y. I. (2014). Pyroelectric Response of Strain Limited III-V Semiconductor. Electronics and Communications, 18(6), 9–15. https://doi.org/10.20535/2312-1807.2013.18.6.142453
Section
Solid-state electronics

References

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