The temperature properties of semiconductor resonant structures with electronic control
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Abstract
The p-i-n diodes as multilayer electromagnetic systems are considered. It is shown that in such systems may experience electromagnetic E-type resonance. Using this approach, analytical expressions for the evaluation of the temperature dependence of the parameters of such devices are obtained. The temperature properties of resonant systems on the base of Si and GaAs p-i-n diodes, namely the dependence of resonant frequency and unloaded Q‑factor from temperature at millimeter wavelengths are experimentally studied. The expediency of the use of p-i-n diodes as controlled resonant structures in the UHF range is shown.
References 5, figures 3, tables 1.
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References
Poplavko Y., Molchanov V., Pashkov V., Furman E., Lanagan M. (2007), “Frequency tunable micro-wave dielectric devices”. Telecommunication and Radio Engineering, Begell House Press, USA. Vol.66, Issue 15, pp. 1371–1379.
Voronkin A.S. (2008), “The automated simulation of parameters of passive lumped elements and line-building-out networks in RF/UHF devices”. Luhansk, Visnyk Skhidnoukrainskoho natsionalnoho uni-versytetu imeni Volodymyra Dalia. Vol. 1Е [Online resource]. http://nbuv.gov.ua/e-journals/Vsunud/2008-1E/08vassvp.htm. (Rus)
Molchanov V.I., Pashkov V.M., Tatarchuk D.D. (2000), “The semiconductor combined structures with E-type dielectric resonance”. Electronics and Communications. Vol. 9, pp. 55–58. (Ukr)
Molchanov V.I., Pashkov V.M., Tatarchuk D.D., Yeremenko A.V. (2003), “The semiconductor resonant structures with electronic control”. Electronics and Communications. Vol. 19, pp. 17–19. (Ukr)
Tatarchuk D.D., Molchanov V.I., Didenko Yu.V., Franchuk A.S. (2013), “The resonance properties of p-i-n-diodes in the UHF range”. Visnyk KhNTU. Vol. 2(47), pp. 339–342. (Ukr)
