Improving the return perfomance of Schottky diode with a security ring
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Abstract
Schottky diodes are used in many fields of electronics as pulse rectifier diodes. Manufacturing Schottky diode with a guard ring allows to significantly improve the protection of the metal-semiconductor transition from a possible flashover.
Existing methods of gettering structural defects and impurities in silicon typically do not fit into a particular technological path of manufacturing semiconductor devices and so are ineffective. In this connection it is appropriate to develop technological methods of gettering individual for each type of technological route of manufacturing a semiconductor device, taking into account its specific features.
This work is devoted to the study of design and technological features of making Schottky diode with guard ring and on the basis of the analysis of optimizing its manufacturing technology aimed at improving the diodes’ yield.
The developed technology makes it possible to significantly increase the breakdown voltage p-n transitions protective ring areas and significantly reduce reverse current Schottky diodes.
References 4, figures 3, tables 1.
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References
Bogach N.V., Gusev V.A., Litovchenko P.G. (1981), “Gettering of packing defects and heavy metal impurities in silicon”. Semiconductor technology and microelectronics. Kiev, MY. 34. Pp. 3-20. (Rus)
Zi S. (1984), “Physics of Semiconductor Devices: In the 2 books. Book 1”. Mir, p. 456. (Rus)
Rayvi K. (1984), “Defects and impurities in semiconductor silicon”. Mir, p. 475. (Rus)
Roderick E. H. (1982), “Contacts metal-semiconductor”. M. Radio and communication, p.208. (Rus)
