Devices with dual-zone tunnel insulator based on nanoscale superconducting contacts and ferromagnetic layers
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Abstract
Within the two-band model of an insulator electron structure it is shown that an effect of the valence-band upper-edge effect on the, charge tunneling across nano-scaled layers of a magnetic dielectric results in a striking discrepancy between theoretical and experimental values of the magnetoresistance of double spin filters. It is found that the tunnel magnetoresistance of contacts formed by ferromagnetic Fe electrodes and a two-band insulator radically depends on the position of a chemical potential inside the forbidden gap of a dielectric.
Reference 8, figures 2.
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