Photosensitive structures with porous silicon
Main Article Content
Abstract
The samples covered with porous silicon layer, achieved by the method of chemical etching, were investigated in this article. The spectral dependences of photosensitivity of the Al/porous-Si contact were achieved and compared with similar dependence for Al/c-Si contact. The analysis of achieved results have shown that photosensitivity in case of the samples of silicon layer is higher by a factor of ten and shortwave “tail” is observed on the spectral dependence. Integrated photosensitivity of the contact grows with increase of etching duration, until in approximately 1.5 minutes of etching it reaches saturation.
Article Details
This work is licensed under a Creative Commons Attribution 4.0 International License.
Authors who publish with this journal agree to the following terms:- Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.
- Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgement of its initial publication in this journal.
- Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).
References
Беляков Л.В., Горячев Д.Н., Сресели О.М. Фотоответ и электролюминесценция структур кремний-<пористый кремний>-<химически осажденный металл> // ФТП. – 2000 – Т.34. - №11. - С. 1386-1390.
Torres-Costa V., Agulló-Rueda F., Martín- Palma R.J. Martínez-Duart J.M. Porous silicon optical devices for sensing applications // Opt. Mater. – 2005 – 27. – P. 1084—1087.
Jalkanen T., Tuura J., Mäkilä E., Salonen J. Electro-optical porous silicon gas sensor with enhanced selectivity. // Sensors and Actuators, B Chemical. – 2010 - 147 (1). - P. 100-104.
Юзова В.А., Левицкий А.А., Харлашин П.А. Развитие технологии получения и исследования пористого кремния // Журнал Сибирского федерального университета. Техника и технологии. – 2011 – Т.4. - №1. –С. 92-111.
Білик Т.Ю., Шмирєва О.М., Алябушев В.І. Електрофізичні властивості гетероструктур наноструктурований кремній/моно кремній // Электроника и связь, Тематический выпуск
«Проблемы электроники» ч. 2. – 2009. – №4- 5. – С. 59–62.
