Nanoheteroepitaxial structures with quantum dots obtained by liquid-phase epitaxy based on GaP
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Abstract
A method of an obtaining of nanoheterostructures with arrays of quantum dots by a process of liquid phase epitaxy with a pulse cooling and a heating of substrate are described. Experimental results for a growing of heterostructures on a base of GaP with quantum dots Ge, InAs and for an investigation of parameters by the atomic-power microscopy and photoluminescence are presented.
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