Features of pore formation of semiconductors by example zinc selenide and indium phosphide
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Abstract
The paper represent a methodology and mechanizm of obtaining porous layers in ZnSe and InP substrates by photoelectochemical etching in acid solutions. Morphology of the surface was investigated by using scanning electron microscopy. By using energy dispersion X-ray analysis method (EDAX) was determined chemical composition of the obtained film`s surface
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