Models of semiconductor structure parameters with p-n junction based on the application of Bessel functions

Main Article Content

L.I. Samotovka
V.L. Samotovka

Abstract

The models for informative electrophysical parameters determination in semiconductor structure with p-n junction were offered. These models take into account leakage current through a resistance that parallel p-n junction. The models were based on small-signal harmonic one- and two-frequency operation

Article Details

How to Cite
Samotovka, . L. ., & Samotovka, V. . (2011). Models of semiconductor structure parameters with p-n junction based on the application of Bessel functions. Electronics and Communications, 16(3), 28–31. https://doi.org/10.20535/2312-1807.2011.16.3.264209
Section
Solid-state electronics

References

V. L. Samotovka and L. I. Samotovka, “Mathematical modeling of currents in a semiconductor structure with a p-n junction”, Electronics and communication, no. 1, pp. 38–42, 2008

V. G. Verbitsky, V. I. Timofeev, and L. I. Samotovka, “Low-frequency method for determining the parameters of a semiconductor structurewith p-n junction”, Electronics and communication, no. 2, pp. 10–12, 2008

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