Modeling the influence of template dimensions on dislocations nanostructures during selective epitaxy of III-nitrides
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Abstract
A simplified model of the process is considered nucleation of defects for optimization of template layers of nanostructures with three-dimensional restrictions When using optimized porous anode template layers aluminum oxide formed on Si (100) substrate, a nitride layer was grown by the chloride-hydride gas-phase epitaxy method gallium, which turned out to be nonpolar with (11 2 0) α- orientation and low anisotropy. Spectra micro cathodoluminescence of the grown films confirms the low density of packing defects
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