Investigation of the influence of the state of the surface of silicon probes for atomic force microscopy for accuracy and quality received topograms

Main Article Content

M.A. Bondarenko
Yu.Yu. Bondarenko
S.A. Shelestovskaya

Abstract

In the article the results of researches of influence of the state of silicic probes’ surface of Ultrasharp CSC12 for AFM on exactness and quality of the got topograms are presented. The results allowed to determine the border term of its exploitation as 80-115 minutes until complete destruction. Researches were conducted by the SEM (JEOL JSM-6700F) and AFM (NT206) methods. Possibility of modification of surfaces of probes which was intensively exploited, by deposition of thin (about 5...8 nm) coat and further electronic treatment is demonstrated in the article. It results in partial renewal of its operating properties (reduces probability of origin of artefacts of scan-out down to 2O...22%, increases the term of exploitation up to 20 minutes) and can serve as a basis of technology to increase the wearproofness and service ability of probes for AFM

Article Details

How to Cite
Bondarenko, M. ., Bondarenko, Y. ., & Shelestovskaya, S. . (2011). Investigation of the influence of the state of the surface of silicon probes for atomic force microscopy for accuracy and quality received topograms. Electronics and Communications, 16(2), 14–17. https://doi.org/10.20535/2312-1807.2011.16.2.268087
Section
Nanostructures and nanotechnology in electronics

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