Effect of etching conditions on the formation of a regular porous structure of A3B5 semiconductors

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Published: Mar 28, 2011
DOI: https://doi.org/10.20535/2312-1807.2011.16.2.268400
Keywords:
electrochemical etching, porous semiconductors, surface morphology, current density

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YE.A. Sychykova
V.V. Kydalov
G.A. Sukach
A I. Kyrylash
A.A. Konovalenko

Abstract

In this paper, the basic factors affecting the formation of porous structure of A3B5 semiconductors were ascertained. These factors are important from the standpoint of controlling the parameters of porous structures. The morphology of porous structures was studied using scanning electron microscope JSM-6490. The chemical composition was studied using the method of EDAX, diffractometric studies were carried out using the diffractometer DRON-3M

Article Details

How to Cite
Sychykova, Y. ., Kydalov, V. . ., Sukach, G. ., Kyrylash, A. I. ., & Konovalenko, A. . (2011). Effect of etching conditions on the formation of a regular porous structure of A3B5 semiconductors. Electronics and Communications, 16(2), 42–45. https://doi.org/10.20535/2312-1807.2011.16.2.268400
Issue
Vol. 16 No. 2 (2011)
Section
Solid-state electronics
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References

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