Application program for simulation of charge transfer quantum-sized heterostructures with a graphical interface user
Main Article Content
Abstract
One- and two-band models of stationary electronic processes in nanoscaled heterostructures were developed, using envelope function formalism. Selfconsistency of quantum charge were achieved by Hartree method; Г-X mixing at the hetero-interfaces was included using conception of intervalley coupling constant. Optical phonon scattering were taken into account via introduction of complex part into Hamiltonian, as well as by means of partition of a whole current into coherent and sequential tunneling channels. User-friendly interface realized in Matlab allows to create any consequence of heterolayers for analysis of most of the AIIIBV compounds
Article Details
This work is licensed under a Creative Commons Attribution 4.0 International License.
Authors who publish with this journal agree to the following terms:- Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.
- Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgement of its initial publication in this journal.
- Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).
References
I. Abramov and I. Goncharenko, “Numericalcombined resonant-tuning modelnelny diode”, Physics and technology of semi-conductorwater workers, no. 39, pp. 1138–1145, 2005.
R. Lake and S. Datta, “Nonequilibrium Green’s-function method applied to double-barrier resonant-tunneling diodes”, Physical Review B, vol. 45, no. 12, pp. 6670–6685, Mar. 1992. DOI:10.1103/PhysRevB.45.6670
K. L. Jensen and F. A. Buot, “Numerical simulation of transient response and resonant‐tunneling characteristics of double‐barrier semiconductor structures as a function of experimental parameters”, Journal of Applied Physics, vol. 65, no. 12, pp. 5248–5250, Jun. 1989. DOI:10.1063/1.343120
R. Tsu and L. Esaki, “Tunneling in a finite superlattice”, Applied Physics Letters, vol. 22, no. 11, pp. 562–564, Jun. 1973. DOI:10.1063/1.1654509
G. Haddad, P. Mazumder, and J. Schulman, “Resonant tunneling diodes: models and properties”, Proceedings of the IEEE, vol. 86, no. 4, pp. 641–660, Apr. 1998. DOI:10.1109/5.663541
Package for modeling transverse transport in nanostructures WinGreen http://www.fz-juelich.de/ibn/mbe/software.html
V. Moskaliuk, V. Timofeev, and A. Fediai, “Simulation of transverse electron transport in resonant tunneling diode”, in 33rd International Spring Seminar on Electronics Technology, ISSE 2010, Warsaw, Poland, 2010, pp. 365–369. DOI:10.1109/ISSE.2010.5547319
N. Huey, Method Basicssecond quantization, Moscow: Energoatomizdat, 1984, p. 208.
H. C. Liu, “Resonant tunneling through single layer heterostructures”, Applied Physics Letters, vol. 51, no. 13, pp. 1019–1021, Sep. 1987. DOI:10.1063/1.98817
J. P. Sun, R. K. Mains, K. Yang, and G. I. Haddad, “A self‐consistent model of Γ‐ mixing in GaAs/AlAs/GaAs quantum well structures using the quantum transmitting boundary method”, Journal of Applied Physics, vol. 74, no. 8, pp. 5053–5060, Oct. 1993. DOI:10.1063/1.354288
Vasko F.T., Electronic states and opti-cal transitions in semiconductor hetero-structures, Kiev: Naukova Dumka, 1993, p. 181.
Y. Zohta and T. Tanamoto, “Improved optical model for resonant tunneling diode”, Journal of Applied Physics, vol. 74, no. 11, pp. 6996–6998, Dec. 1993. DOI:10.1063/1.355054
J. P. Sun and G. I. Haddad, “Self-Consistent Scattering Calculation of Resonant Tunneling Diode Characteristics”, VLSI Design, vol. 6, no. 1-4, pp. 83–86, Jan. 1998. DOI:10.1155/1998/78412
C. S. Lent and D. J. Kirkner, “The quantum transmitting boundary method”, Journal of Applied Physics, vol. 67, no. 10, pp. 6353–6359, May 1990. Doi:10.1063/1.345156
T. Tanoue and H. Mizuta, The physics and applicationof resonant tunnelling diode, CambridgeUniversity Press, 1993, p. 245.
I. Abramov, I. Goncharenko, N. Kolomejtseva, and A. Shilov, “RTD Investigations using Two- Band Models of Wave Function Formalism Microwave & Telecommunication Technolog”, in CriMiCo 2007. 17th International Crimean Conference, pp. 589–590.
A. Samarsky, Introduction to theorydifference schemes, Moscow: Nauka, 1971, p. 553.
R. Hockney and J. Eastwood, Moscow: Mir, 1987, p. 640.
O. Pinaud, “Transient simulations of a resonant tunneling diode”, Journal of Applied Physics, vol. 92, no. 4, pp. 1987–1994, Aug. 2002. DOI:10.1063/1.1494127