Application program for simulation of charge transfer quantum-sized heterostructures with a graphical interface user

Main Article Content

V.O. Moskalyuk
A.V. Fediy
O.Yu. Yaroshenko

Abstract

One- and two-band models of stationary electronic processes in nanoscaled heterostructures were developed, using envelope function formalism. Selfconsistency of quantum charge were achieved by Hartree method; Г-X mixing at the hetero-interfaces was included using conception of intervalley coupling constant. Optical phonon scattering were taken into account via introduction of complex part into Hamiltonian, as well as by means of partition of a whole current into coherent and sequential tunneling channels. User-friendly interface realized in Matlab allows to create any consequence of heterolayers for analysis of most of the AIIIBV compounds

Article Details

How to Cite
Moskalyuk, V. ., Fediy, A. ., & Yaroshenko, O. . (2011). Application program for simulation of charge transfer quantum-sized heterostructures with a graphical interface user. Electronics and Communications, 16(1), 48–53. https://doi.org/10.20535/2312-1807.2011.16.1.273928
Section
Vacuum, plasma and quantum electronics

References

I. Abramov and I. Goncharenko, “Numericalcombined resonant-tuning modelnelny diode”, Physics and technology of semi-conductorwater workers, no. 39, pp. 1138–1145, 2005.

R. Lake and S. Datta, “Nonequilibrium Green’s-function method applied to double-barrier resonant-tunneling diodes”, Physical Review B, vol. 45, no. 12, pp. 6670–6685, Mar. 1992. DOI:10.1103/PhysRevB.45.6670

K. L. Jensen and F. A. Buot, “Numerical simulation of transient response and resonant‐tunneling characteristics of double‐barrier semiconductor structures as a function of experimental parameters”, Journal of Applied Physics, vol. 65, no. 12, pp. 5248–5250, Jun. 1989. DOI:10.1063/1.343120

R. Tsu and L. Esaki, “Tunneling in a finite superlattice”, Applied Physics Letters, vol. 22, no. 11, pp. 562–564, Jun. 1973. DOI:10.1063/1.1654509

G. Haddad, P. Mazumder, and J. Schulman, “Resonant tunneling diodes: models and properties”, Proceedings of the IEEE, vol. 86, no. 4, pp. 641–660, Apr. 1998. DOI:10.1109/5.663541

Package for modeling transverse transport in nanostructures WinGreen http://www.fz-juelich.de/ibn/mbe/software.html

V. Moskaliuk, V. Timofeev, and A. Fediai, “Simulation of transverse electron transport in resonant tunneling diode”, in 33rd International Spring Seminar on Electronics Technology, ISSE 2010, Warsaw, Poland, 2010, pp. 365–369. DOI:10.1109/ISSE.2010.5547319

N. Huey, Method Basicssecond quantization, Moscow: Energoatomizdat, 1984, p. 208.

H. C. Liu, “Resonant tunneling through single layer heterostructures”, Applied Physics Letters, vol. 51, no. 13, pp. 1019–1021, Sep. 1987. DOI:10.1063/1.98817

J. P. Sun, R. K. Mains, K. Yang, and G. I. Haddad, “A self‐consistent model of Γ‐ mixing in GaAs/AlAs/GaAs quantum well structures using the quantum transmitting boundary method”, Journal of Applied Physics, vol. 74, no. 8, pp. 5053–5060, Oct. 1993. DOI:10.1063/1.354288

Vasko F.T., Electronic states and opti-cal transitions in semiconductor hetero-structures, Kiev: Naukova Dumka, 1993, p. 181.

Y. Zohta and T. Tanamoto, “Improved optical model for resonant tunneling diode”, Journal of Applied Physics, vol. 74, no. 11, pp. 6996–6998, Dec. 1993. DOI:10.1063/1.355054

J. P. Sun and G. I. Haddad, “Self-Consistent Scattering Calculation of Resonant Tunneling Diode Characteristics”, VLSI Design, vol. 6, no. 1-4, pp. 83–86, Jan. 1998. DOI:10.1155/1998/78412

C. S. Lent and D. J. Kirkner, “The quantum transmitting boundary method”, Journal of Applied Physics, vol. 67, no. 10, pp. 6353–6359, May 1990. Doi:10.1063/1.345156

T. Tanoue and H. Mizuta, The physics and applicationof resonant tunnelling diode, CambridgeUniversity Press, 1993, p. 245.

I. Abramov, I. Goncharenko, N. Kolomejtseva, and A. Shilov, “RTD Investigations using Two- Band Models of Wave Function Formalism Microwave & Telecommunication Technolog”, in CriMiCo 2007. 17th International Crimean Conference, pp. 589–590.

A. Samarsky, Introduction to theorydifference schemes, Moscow: Nauka, 1971, p. 553.

R. Hockney and J. Eastwood, Moscow: Mir, 1987, p. 640.

O. Pinaud, “Transient simulations of a resonant tunneling diode”, Journal of Applied Physics, vol. 92, no. 4, pp. 1987–1994, Aug. 2002. DOI:10.1063/1.1494127