Electrical conductivity of titanium-containing SIALONs obtained with different cooling rates
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Abstract
It was established that the technological cooling mode after hot-pressing affects the morphology of a multicomponent material and its defect structure formation. It was shown that d.c. conductivity is a key responsible parameter
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References
M. Torti, “Silicon Nitride and Silicon Carbide. Propertiesand shape Capability”, Powder Metallurgy International, vol. 6, no. 4, pp. 186–189, Jan. 1974.
K. S. MAZDIYASNI and C. M. COOKE, “Consolidation, Microstructure, and Mechanical Properties of Si3N4 Doped with Rare-Earth Oxides”, Journal of the American Ceramic Society, vol. 57, no. 12, pp. 536–537, Dec. 1974. DOI:10.1111/j.1151-2916.1974.tb10806.x
I. Osipova and D. Pogorelova, “Rekristallization of silicon nitride powders athot pressing”, Powder metallurgy, no. 10, pp. 43–47, 1982.
D. Karpinos, E. Mikhashchuk, and G. Totskaya, “Composite material based on filamentsilicon ride”, in Production methods, propertieswa and applications of nitrides: Mateseminar rials, p. 74, 1980
V. Gritsenko, Y. Novikov, A. Shaposhnikov, and Y. Morokov, “Numerical simulation of intrinsic defects in SiO2 and Si3N4”, FTP, vol. 35, no. 9, pp. 1041–1049, 2001.
V. Petrovsky, “The role of the liquid phase in thestudying the properties of sialon ceramics”, CERAMICS 45, pp. 41–50, 1994.
J. Zhang, J. Yuan, Y. Ma, and A. Oates, “Design optimization of stacked layer dielectrics for minimum gate leakage currents”, Solid-State Electronics, vol. 44, no. 12, pp. 2165–2170, Dec. 2000. DOI:10.1016/S0038-1101(00)00185-4
C. Kawai and A. Yamakawa, “Crystal growth of silicon nitride whiskers through a VLS mechanism using SiO2Al2O3Y2O3 oxides as liquid phase”, Ceramics International, vol. 24, no. 2, pp. 135–138, Jan. 1998. DOI:10.1016/S0272-8842(97)00042-4
[1]R. Sabia and L. Ukrainczyk, “Surface chemistry of SiO2 and TiO2–SiO2 glasses as determined by titration of soot particles”, Journal of Non-Crystalline Solids, vol. 277, no. 1, pp. 1–9, Nov. 2000. DOI:10.1016/S0022-3093(00)00237-4
M. Kuzenkova and V. Ivzhenko, “Influence of titanium hydride additives on the structure and strength of ceramics based on silicon nitride”, in Getters, properties, and scopesNitride Applications: Seminar Proceedings, Riga: Zinatne, p. 118.
V. Petrovsky, “Physical principles andtechnological aspects of obtaining gradient composites based onoxygen-free ceramics”, Powderedmetallurgy, no. 7/8, pp. 50–54, 1998.
G. Gnesin, V. Kirilenko, and V. Petrovsky, “Quality control of hot pressedsilicon nitride dielectricmaterials”, Powder metallurgy, no. 3, pp. 53–59, 1982.
M. Levinshtein and G. Simin, Barriers (Fromcrystal to integrated circuit), Moscow: Nauka, 1987, p. 320.
J. S. Thorp and R. I. Sharif, “Electrical conductivity in hot-pressed nitrogen ceramics”, Journal of Materials Science, vol. 11, no. 8, pp. 1494–1500, Aug. 1976. DOI:10.1007/BF00540883
J. S. Thorp and R. I. Sharif, “D. C. electrical properties of hot-pressed nitrogen ceramics”, Journal of Materials Science, vol. 13, no. 2, pp. 441–449, Feb. 1978. DOI:10.1007/BF00647791
A. Rzhanov, Silicon nitride in electronics, Novosibirsk: Nauka, 1982, p. 200.
O. Golikova, “Features of the structure of films of amorphous hydrogenated silicon,precipitated by the decomposition of silane ondirect current in a magnetic field”, FTP, vol. 31, no. 7, pp. 816–819, Jan. 1997.
O. Golikova and M. Kazanin, “Filmsamorphous hydrogenated silicon with increased photosensitivity”, FTP, vol. 33, no. 1, pp. 110–113, 1999.
