Distribution of the electric field and voltage in the structure high-voltage semiconductor devices with bulk separating layer
Main Article Content
Abstract
The analysis of the electric field distribution and the voltage in the p-n junction with a volumetric dividing layer is conducted. The dependency between the voltage and the volumetric dividing layer structure parameters is derived. Experimental results for the bipolar transistors with a built-in volumetric dividing layer are presented
Article Details
This work is licensed under a Creative Commons Attribution 4.0 International License.
Authors who publish with this journal agree to the following terms:- Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.
- Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgement of its initial publication in this journal.
- Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).
References
V. Gusev and A. Borisov, “Pulse diode withlimited recombination region”, Electronics and communications, no. 8, pp. 338–341, Jan. 2000.
J. Sin, “Optimization of the specific on-resistance of the COOLMOS/sup TM/”, IEEE Transactions on Electron Devices, vol. 48, no. 2, pp. 344–348, Feb. 2001 DOI:10.1109/16.902737
J. Sin, “A novel high-voltage sustaining structure with buried oppositely doped regions”, IEEE Transactions on Electron Devices, vol. 47, no. 6, pp. 1280–1285, Jun. 2000 DOI:10.1109/16.842974
A.s. No. 1407344 USSR MKI(51)5 HO1L High- Voltage bipolar transistor / V.A. Gusev, S.E.Motornaya, V.A.Konovalov (USSR). – No. 4119979; Declared 06/12/1986; Publ. 04/01/1988.
A. Blicher, Physics of force and bipolartransistors: Per. from English, Leningrad: Energoatomizdat, 1986, p. 250.
