Threshold voltage of nano-sized MOS transistors gate dielectric thickness

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Published: Mar 29, 2010
DOI: https://doi.org/10.20535/2312-1807.2010.15.4.299603

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V.G. Verbitsky
L.I. Samotovka
V.L. Samotovka

Abstract

In this work the characterization parameters for MOSFET threshold voltage calculation with nanoscale gate oxide width were investigated. The technique for MOSFET threshold voltage determination that is based on the difference frequency method was offered.

Article Details

How to Cite
Verbitsky, V. ., Samotovka, L. ., & Samotovka, V. . (2010). Threshold voltage of nano-sized MOS transistors gate dielectric thickness. Electronics and Communications, 15(4), 11–16. https://doi.org/10.20535/2312-1807.2010.15.4.299603
Issue
Vol. 15 No. 4 (2010)
Section
Nanostructures and nanotechnology in electronics
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References

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