Methods of obtaining and studying the morphology of porous layers p-InP and p-GaAs
Main Article Content
Abstract
Porous layers of p-type GaAs have been obtained by a method electrochemical etchings. The methods of X-ray photoelectron spectroscopy (XPS), energy dispersive analysis of Xrays (EDAX) and diffractometer had been defined presence of oxide. For the first time by the method of photoelectrochemical etching porous layers of p-type InP with a pore size 30- 40 nm have been obtained, the thickness of the porous layer is 20 microns
Article Details
This work is licensed under a Creative Commons Attribution 4.0 International License.
Authors who publish with this journal agree to the following terms:- Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.
- Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgement of its initial publication in this journal.
- Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).
References
V. Ulin and S. Konnikov, “The nature of the processes of electrochemical pore formation inIIIBV crystals (part 1)”, FTP, vol. 41, no. 7, pp. 854–866, Jan. 2007.
V. Ulin and S. Konnikov, “The nature of the processes of electrochemical pore formation incrystals AIIIBV (part 2)”, FTP, vol. 41, no. 7, pp. 867–877, Jan. 2007.
V. V. Kidalov, G. A. Sukach, A. S. Revenko, and A. D. Bayda, “Properties of cubic GaN films obtained by nitridation of porous GaAs(001)”, physica status solidi (a), vol. 202, no. 8, pp. 1668–1672, May 2005. doi:10.1002/pssa.200461215
L. Santinacci and T. Djenizian, “Electrochemical pore formation onto semiconductor surfaces”, Comptes Rendus. Chimie, vol. 11, no. 9, pp. 964–983, Jul. 2008. doi:10.1016/j.crci.2008.06.004
R. Srinivasan and K. Ramachandran, “Thermal diffusion in nanostructured porous InP”, Bulletin of Materials Science, vol. 31, no. 6, pp. 863–868, Nov. 2008. doi:10.1007/s12034-008-0138-6
H. Föll, S. Langa, J. Carstensen, M. Christophersen, and I. Tiginyanu, “Pores in III–V Semiconductors”, Advanced Materials, vol. 15, no. 3, pp. 183–198, Feb. 2003. doi:10.1002/adma.200390043
I. Šimkiene, A. Kindurys, M. Treideris, and J. Sabataityte, “Formation of Porous n-A B Compounds”, Acta Physica Polonica A, vol. 113, no. 3, pp. 1085–1090, Mar. 2008. doi:10.12693/APhysPolA.113.1085
U. Schlierf, D. Lockwood, M. Graham, and P. Schmuki, “Structural and optical properties of p-InP(1 0 0) anodized in halogenic acids”, Electrochimica Acta, vol. 49, no. 11, pp. 1743–1749, Apr. 2004. doi:10.1016/j.electacta.2003.12.005
S. Langa, I. M. Tiginyanu, J. Carstensen, M. Christophersen, and H. Föll, “Self-organized growth of single crystals of nanopores”, Applied Physics Letters, vol. 82, no. 2, pp. 278–280, Jan. 2003. doi:10.1063/1.1537868
V. V. Kidalov, “Optical properties of p-type porous GaAs”, Semiconductor physics, quantum electronics and optoelectronics, vol. 8, no. 4, pp. 118–120, Dec. 2005. DOI:10.15407/spqeo8.04.118
T. Sato and A. Mizohata, “Photoelectrochemical Etching and Removal of the Irregular Top Layer Formed on InP Porous Nanostructures”, Electrochemical and Solid-State Letters, vol. 11, no. 5, p. H111, Jan. 2008. doi:10.1149/1.2844216
