Frequency and temperature dependences of the dielectric loss in semiconductors at UHF
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Abstract
The article analyzes the nature of the dielectric loss in silicon and gallium arsenide. The experimental frequency and temperature dependences of the dielectric loss in semiconductors at UHF are presented. Also the results of mathematical modeling are shown.
References 3, figures 3.
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References
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Poplavko Y. M., Yakimenko Y. I. (2013), “Piezoelectrics”. Kiev, NTUU «KPI». P. 328. (Ukr)
Didenko Y. V., Poplavko Y. M., Tatarchuk D. D. (2014), “Temperature Dependences of Losses in High Frequency Dielectrics”. Electronics and Communications. Vol. 19, no. 4(81), pp. 28–35.
