Analysis of 1D and 3D Distribution of Electric Potential in the Porphy-rin-coated Silicon Nanowire Field-effect Transistors

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Published: Mar 5, 2015
DOI: https://doi.org/10.20535/2312-1807.2014.19.5.38770
Keywords:
silicone nanowire, field-effect transistor, porphyrin, electric potential

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D. S. Bodilovska

Abstract

In this paper, we have analyzed electric potential distributions in undoped silicon nanowire field-effect transistor (Si-NW FET) with a back-gate configuration covered by organic compound - porphyrin. Specifically we studied the 1D electrostatic potential along the different axes of the Si-NW FET for the subsequent investigation of electron transport characteristics. Reference 5, figures 6.

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How to Cite
Bodilovska, D. S. (2015). Analysis of 1D and 3D Distribution of Electric Potential in the Porphy-rin-coated Silicon Nanowire Field-effect Transistors. Electronics and Communications, 19(5), 9–13. https://doi.org/10.20535/2312-1807.2014.19.5.38770
Issue
Vol. 19 No. 5 (2014)
Section
Solid-state electronics
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References

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