Modeling of templet nanostructures

Main Article Content

E. V. Semenovskaya
N. М. Lyahova
V. I. Osinskii
N. О. Suhoviy
E. M. Faleeva
V. I. Timofeyev

Abstract

The purpose of paper is to find the optimal parameters for decreasing dislocations in templet nanostructures. The estimation method of dislocation-free relief germination of templet nanostructures is developed. The influence of templet size on the dislocation density of nanostructures is studed. The dependence of the dislocation height on its radius is determined. The influence of the nanostructures lattice mismatch on conditional relief dislocation of templet semiconductor nanostructures is studed.

Reference 9, figures 4.

Article Details

How to Cite
Semenovskaya, E. V., Lyahova N. М., Osinskii, V. I., Suhoviy N. О., Faleeva, E. M., & Timofeyev, V. I. (2015). Modeling of templet nanostructures. Electronics and Communications, 19(5), 32–36. https://doi.org/10.20535/2312-1807.2014.19.5.38788
Section
Vacuum, plasma and quantum electronics

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