Al/nanocrystalline CeOx/Si/Al structures for heterojunction photodetectors
Main Article Content
Abstract
A stable metal/nc-CeOx/Si structures were fabricated and investigated for the creation of heterojunction photodetectors. The photosensitivity of obtained structures in the visible range was 330 μA/lm∙V. The value of the interface state density was of 7∙1010 cm-2∙eV-1. DC dielectric constant of nanocrystalline CeOx film was about 15. Thin (80 nm) cerium oxide films in Al/nc-CeOx/Si/Al structures were obtained by the vacuum flash evaporation method. The effect of technological factors on the CeOx films microstructure as well as on photoelectric properties of the Al/nc-CeOx/Si/Al structures has been investigated. Electrophysical and photoelectric properties of the Al/nc-CeOx/Si/Al structures has been investigated. It was revealed that the nanocrystalline CeOx layer in the obtained Al/nc-CeOx/Si/Al structures is a semiconductor with an electronic conductivity. It’s volume resistivity is within the range of 0.5-30 МOhm∙cm.
Reference 9, figures 2.
Article Details
This work is licensed under a Creative Commons Attribution 4.0 International License.
Authors who publish with this journal agree to the following terms:- Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.
- Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgement of its initial publication in this journal.
- Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).
References
Borisov A. V., Shmyryeva A. N., Maksimchuk N. V. Nanocrystalline Films of Cerium Oxide for Biolu-minescent Sensory Systems // J. Nanosystems, Nanomaterials, Nanotechnologies.– 2009.– vol.7.– Pp. 245-254.
Channei D., Nakaruk A., Phanichphant S., Koshy P. and Sorrell C. C. Cerium dioxide thin films using spin coating // Journal of Chemistry.– 2013.– vol. 2013.– Pp. 579284–579287.
Iordanova I., Popova L., Aleksandrova P., Beshkov G., Vlahkov E., Mirchev R., Blagoev B. X-ray in-vestigation of annealed CeO2 films prepared by sputtering on Si substrates // J. Thin Solid Films.– 2007.– vol. 515.– Pp. 8078–8081.
Ivanov V.K., Polezhaeva O.S., Tretiakov Y.D. Nanocrystalline cerium dioxide: synthesis, structure-sensitive properties and promising field of application // Russian Chemical Journal.– 2009.– vol.53.– № 2.– Pp. 56-67.
Maksimchuk N.V., Shmyryeva A.N., Borisov A.V. Properties and Applications of Nanocrystalline Ceri-um Oxide Films // J. Technology and Design in Electronic Equipment.– 2010.– № 5-6.– Pp. 54-59.
McGill T.C. Development and applications of heterojunctions for nanoelectronics for silicon // Final report, California institute of technology.– November 2.– 2002.
Melnik V.G., Nazarenko V.I., Starodub N.F., Maksimchuk N.V., Shmyryeva A.N. Electronic Biolumi-nescent Device for Determination of Toxic Substances // J. Electronics and Communications.– 2008.– part 2.– Pp. 110-114.
Patsalas Р., Logothetidis S. Structure-dependent electronic properties of nanocrystalline cerium oxide // J. Physical Review.– 2003.– vol. B 68.– P. 035104.
Shmyryeva A.N., Borisov A.V., Maksimchuk N.V. Electronic sensors Built on Nanostructured Cerium Oxide Films // J. Nanotechnologies in Russia.– 2010.–vol.5.– № 5-6.– Pp. 382-389.
