Nanoelectronic devices with memory-effect of electromigration of oxygen vacancies in complex oxides of transition metals
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Abstract
It is shown that the electromigration of oxygen ions caused by ac electric fields is the main origin of a two-valued current-voltage characteristic in contacts of a metallic electrode with a com-plex transition-metal oxide. The effect is proposed to apply for a significant enhancement of func-tionalities of a memristor, a novel basic element in nanoelectronics.
Reference 11, figures 3.
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