Surface morphology of microstructured porous silicon
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Abstract
In the paper surface morphology and pore structure of stain etched porous silicon layers depending on wafer type and characteristics are analysed. SEM-microphotography shows that pore’s geometry correlate with defects density on the wafer surface. In the case of high quantity of defects (low-resistance or matt wafers) pores are 10µm long and 100 nm width. On polished and high-resistance wafers pores have circular shape with diameter up to 1 µm. Thickness of porous layer depends on etching time
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