Preparation and structure of CuInSe2 thin films for solar cells at low substrate temperatures

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Published: Mar 28, 2011
DOI: https://doi.org/10.20535/2312-1807.2011.16.1.273867
Keywords:
structure, phase composition, electron microscopy

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S.N. Grigorov
A.V. Taran
V.S. Taran
A.I. Tymoshenko

Abstract

CIS epitaxial films were grown on (001) KCl surface with PbS sublayer and on glassceramic at 400оС. Annealing of the (α + β)-CIS films on glass-ceramic, in two-step vacuum-arc plasma discharge at 550oC provided the formation of a homogeneous large-crystalline α- CIS

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How to Cite
Grigorov, S. ., Taran, A. ., Taran, V. ., & Tymoshenko, A. . (2011). Preparation and structure of CuInSe2 thin films for solar cells at low substrate temperatures. Electronics and Communications, 16(1), 27–29. https://doi.org/10.20535/2312-1807.2011.16.1.273867
Issue
Vol. 16 No. 1 (2011)
Section
Solid-state electronics
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References

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