Electrical properties of aluminum nitride in a strong field
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Abstract
Using the analytical expressions for relaxation times of different scattering mechanisms properties of charge carriers’ transport for zincblende aluminum nitride in the high field region were described. Also temperature dependence of low field mobility, filed-velocity and field-temperature characteristics as well as the occupation function of valleys in the high electric field were calculated
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References
J. W. Orton and C. T. Foxon, “Group III nitride semiconductors for short wavelength light-emitting devices”, Reports on Progress in Physics, vol. 61, no. 1, pp. 1–75, Jan. 1998. DOI:10.1088/0034-4885/61/1/001
F. A. Ponce and D. P. Bour, “Nitride-based semiconductors for blue and green light-emitting devices”, Nature, vol. 386, no. 6623, pp. 351–359, Mar. 1997. DOI:10.1038/386351a0
S. C. Jain, M. Willander, J. Narayan, and R. V. Overstraeten, “III–nitrides: Growth, characterization, and properties”, Journal of Applied Physics, vol. 87, no. 3, pp. 965–1006, Feb. 2000. DOI:10.1063/1.371971
I. Petrov, E. Mojab, R. C. Powell, J. E. Greene, L. Hultman, and J.-E. Sundgren, “Synthesis of metastable epitaxial zinc-blende-structure AlN by solid-state reaction”, Applied Physics Letters, vol. 60, no. 20, pp. 2491–2493, May 1992 DOI:10.1063/1.106943
R. F. Davis, “Thin films and devices of diamond, silicon carbide and gallium nitride”, Physica B: Condensed Matter, vol. 185, no. 1-4, pp. 1–15, Apr. 1993. DOI:10.1016/0921-4526(93)90210-W
I. Vurgaftman and J. R. Meyer, “Band parameters for nitrogen-containing semiconductors”, Journal of Applied Physics, vol. 94, no. 6, pp. 3675–3696, Sep. 2003. Doi:10.1063/1.1600519
W. J. Fan, M. F. Li, T. C. Chong, and J. B. Xia, “Electronic properties of zinc-blende GaN, AlN, and their alloys Ga1− Al N”, Journal of Applied Physics, vol. 79, no. 1, pp. 188–194, Jan. 1996. DOI:10.1063/1.360930
S. K. Pugh, D. J. Dugdale, S. Brand, and R. A. Abram, “Electronic structure calculations on nitride semiconductors”, Semiconductor Science and Technology, vol. 14, no. 1, pp. 23–31, Jan. 1999. DOI:10.1088/0268-1242/14/1/003
M. Suzuki and T. Uenoyama, “Optical gain and crystal symmetry in III–V nitride lasers”, Applied Physics Letters, vol. 69, no. 22, pp. 3378–3380, Nov. 1996. DOI:10.1063/1.117265
A. T. Meney, E. P. O’Reilly, and A. R. Adams, “Optical gain in wide bandgap GaN quantum well lasers”, Semiconductor Science and Technology, vol. 11, no. 6, pp. 897–903, Jun. 1996. DOI:10.1088/0268-1242/11/6/008
K. Kulikov and V. Moskaluk, “High-frequency parameters of gallium nitride”, Technique andMicrowave devices, no. 2, p. 48, 2008.
V. Moskaluk, Physics of electronic processes, vol. II, Dynamic processes, Kyiv: Avers, 2004, p. 186.
C. Bulutay, B. K. Ridley, and N. A. Zakhleniuk, “Electron momentum and energy relaxation rates in GaN and AlN in the high-field transport regime”, Physical Review B, vol. 68, no. 11, Sep. 2003. DOI:10.1103/PhysRevB.68.115205