Impulse Transport Properties of Threenitrids
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Abstract
Based on relaxation equations of energy balance, momentum and occupation of valleys was modelling the transitional effect „overshoot” of drift velocity in threenitrids on the example of aluminium nitride, gallium nitride, indium nitride. The possibility of multiple exceeding over the stationary values.
References 3, figures 2, tables 1
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References
Bol K.K., Moskaliuk V.A. (2013), “Modeling of velocity “overshoot” in the multivalley semiconductors” Proceedings of the XXXIII International Scientific Conference ELNANO-2013, pp 123-125.
Shur М. (1987), “GaAs Devices and Circuits”, Plenum Press, New York and London, p. 632.
Shur М. (1999), “Transient electron transport in wurtzite GaN, InN, and AlN”, American Institute of Physics.
Seeger К. (1973), “Semiconductor Physics”, Wein: Springer-Verlag, p. 616.
Moskaliuk V.A. (2004), “Physics of Electron Processes. Dynamic Processes”, Textbook, Kyiv: Polіtehnіka, p. 180. (Rus)
