Aluminum oxynitride dielectric films prepared by reactive sputtering
Main Article Content
Abstract
Influence of technological modes of synthesis of aluminum oxynitride films by a method of magnetron reactive sputtering on their physical and chemical parameters is probed. Studied by IR spectroscopy and Auger electron microscopy and elemental, phase and structural composition of the synthesized films. Features of spectral and electro-physical parameters of films are discussed. Chemical stability of films is probed. Recommendations about modes of synthesis of films of electro-physical parameters of films providing optimization on the given their operational properties are received.
References 13, figures 3, table 1.
Article Details
This work is licensed under a Creative Commons Attribution 4.0 International License.
Authors who publish with this journal agree to the following terms:- Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.
- Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgement of its initial publication in this journal.
- Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).
References
Zolotuhin, I. V., Kalinin, Ju. V., Sitnikov, A. V. (2006). Nanokompozitnye struktury na puti v nanojelektroniku [Nanocomposite structure on the way to nanoelectronics]. Priroda, No. 1, Pp.11-19. (Rus)
Machulyanskiy, A. V. (2007). High-frequency conductivity of nano-sized metal particles. Electronics & Telecommunication. Part.1, Pp.41–45.
Beresnev, O. V., Sobol', D. A. (2012). Kolesnikov i dr. Fiziko-himicheskie i mehani-cheskie svojstva nanostrukturnyh nitridnyh pok-rytij /V.M. [Physico-chemical and mechanical properties of nanostructured nitride coatings]. Metallofiz. novejshie tehnol, Vol.34, No. 2, Pp.139-160. (Rus)
Pogrebnjak, A. D., Muhammed, A. K. M. (2012). Properties of AlN films deposited to silicon substrates. International Journal of Structronics & Mechatronics. Vol. 1, No. 2, Pp. 1-3.
Stafiniak, A., Muszynska, D., Szyszka, A., et al. (2009). Properties of AlNx thin films prepared by DC reactive magnetron sputtering. Optica Applicata. Vol.39, No. 4, Pp. 717-722.
Garcia-Mendez, M., Morales-Rodriquez, S., Machorro, R., et al. (2008). Characterixation of AlN thin films deposited by DC reactive magne-tron sputtering. Revista mexicana de fisica. Vol. 54,No. 4, Pp.271-278.
Pogrebnjak, A. D., Muhammed, A. K. M., Ivashhenko, M. N., i dr. (2012). Strukturnye issledovanija plenok oksida cinka i nitrida aljuminija , roluchennyh metodami CVD i magnetronnogo raspylenija [Structural studies of zinc oxide films and aluminum nitride roluchennyh methods CVD and magnetron sputtering]. FIP, Vol. 10, No. 2, Pp. 177-182. (Rus)
Gerova, E. V., Ivanov, N. A., Kirov, K. J. (1981). Deposition of AIN thin films by magne-tron reactive sputtering. Thin Solid Films, Vol. 86, No. 2, Pp. 201-206.
Rzhanova, A. V. (1982). Nitrid kremnija v elek-tronike. [Silicon nitride in electronics]. Novosi-birsk, Nauka, P. 200. (Rus)
Rzhanova, A. V. (1983). Еllipsometrija - metod issledovanija poverhnosti [Ellipsometry - re-search method surface]. Novosibirsk, Nauka, P. 422. (Rus)
Jones, D. J., French, R. H., Mullejans, H., et al. (1999). Optical properties of AlN determined by vacuum ultraviolet spectroscopy and spectro-scopic ellipsometry data. J. Mater. Res, Vol.14, No. 11, Pp. 4337-4344.
Anderson, A. M. (1977). Primenenie spektrov kombinacionnogo rassejanija. [Application of Raman spectra]. Moskva, Mir, P. 586.
Li, J., Nam, K. B., Nakarmi, M. L., et al. (2003). Band structure and fundamental optical transi-tions in wurtzite AlN. Appl. Phys. Lett, Vol.83, No. 25, Pp. 515-519. (Rus)
